| PART |
Description |
Maker |
| SGW10N60 SGB10N60 |
Fast S-igbt in Npt-technology
|
Infineon Technologies Corporation
|
| K25N120 |
Fast IGBT in NPT-technology
|
Infineon Technologies
|
| SGW02N12006 |
Fast IGBT in NPT-technology
|
Infineon Technologies AG
|
| SKW15N120 Q67040-S4281 |
IGBTs & DuoPacks - 15A 1200V TO247AC IGBT Diode
FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE 在不扩散核武器条约快速IGBT技术与软，恢复快反平行Emcon二极
|
INFINEON[Infineon Technologies AG]
|
| SKB02N12007 SKB02N120 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SKW20N60 Q67040-S4242 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SKB10N60A SKP10N60A SKW10N60A |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW25N12009 SGW25N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB20N60 SGB20N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB04N60 SGB04N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
